1N4151 high speed switching diode features : ? high switching speed: max. 4 ns ? reverse voltage:max. 50 v ? peak reverse voltage:max. 75 v ? pb / rohs free mechanical data : case: do-35 glass case weight: approx. 0.13g maximum ratings and thermal characteristics ( rating at 25 c ambient temperature unless otherwise specified .) symbol value unit v rm 75 v v r 50 v maximum continuous forward current i f 200 ma maximum average forward current half wave rectification with resistive load , f 3 50hz (1) maximum non-repetitive peak forward current at t = 1s i fsm 0.5 a maximum power dissipation p d 500 mw maximum junction temperature t j 175 c storage temperature range t s -65 to + 175 c electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol min typ max unit i r v r = 50 v - - 0.05 m a v r = 50 v , tj = 150 c - - 50 m a forward voltage v f i f = 50 ma - - 1.0 v reverse breakdown voltage v (br)r i r = 5a (pulsed) 75 - - v diode capacitance cd - - 2.5 pf i f = 10 ma to i r = 10ma to i r = 1ma page 1 of 2 rev. 02 : march 25, 2005 i f(av) 150 ma ns 4 f = 1mhz ; v r = 0 - - test condition reverse recovery time trr parameter maximum peak reverse voltage maximum reverse voltage reverse current do - 35 glass (do-204ah) 0.079(2.0 )max. 0.150 (3.8) max. 0.020 (0.52)max. dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. cathode mark
rating and characteristic curves ( 1N4151 ) fig. 1 maximum forward current fig. 2 typical forward voltage versus ambient temperature fig. 3 typical diode capacitance as a function of reverse voltage page 2 of 2 rev. 02 : march 25, 2005 0 10 20 reverse voltage , v r (v) 0.4 0.5 1.2 d i o d e c a p a c i t a n c e , c d ( p f ) 0 0.4 1.2 forward voltage , v f (v) 0.01 10 1000 f o r w a r d c u r r e n t , i f ( m a ) 0.1 1 100 0 0 100 200 ambient temperature , ta ( c) 50 150 0.2 0.6 1.0 1.4 0.6 0.7 0.8 0.9 1.0 100 200 0.8 f = 1mhz; t j = 25 c t j = 25 c a v e r a g e f o r w a r d o u t p u t c u r r e n t , m a
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